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DTC114YET1G 晶体管 ON
DTC114YET1G
ON(安森美)
SC-75
无铅环保型
贴片式
卷带编带包装
NPN型
10 kOhms
200 mW (1/5 W)
100 mA
0.1 A
产品信息
DTC114YET1G
双极晶体管 - 预偏置 100mA 50V BRT NPN
NPN Transistors with Monolithic Bias Resistor Network
This DTC114YET1G series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
DTC114YET1G Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
型号: DTC114YET1G
制造商: ON Semiconductor
产品种类: 双极晶体管 - 预偏置
RoHS: 无铅环保
配置: Single
晶体管极性: NPN
典型输入电阻器: 10 kOhms
典型电阻器比率: 0.21
安装风格: SMD/SMT
封装 / 箱体: SC-75-3
直流集电极/Base Gain hfe Min: 80
集电极—发射极电压 VCEO: 50 V
集电极连续电流: 0.1 A
峰值直流集电极电流: 100 mA
Pd-功率耗散: 200 mW (1/5 W)
工作温度: - 55 ℃
工作温度: + 150 ℃
系列: DTC114YE
封装: Cut Tape
封装: Reel
直流电流增益 hFE 值: 80
高度: 0.75 mm
长度: 1.6 mm
宽度: 0.8 mm
商标: ON Semiconductor
CNHTS: 8541210000
HTS Code: 8541210095
MXHTS: 85412101
产品类型: BJTs - Bipolar Transistors - Pre-Biased
工厂包装数量: 3000
子类别: Transistors
TARIC: 8541210000
单位重量: 2.510 mg